Open AccessПолучение наноразмерных пленок CoSiO на поверхности СoSi-=SUB=-2-=/SUB=- методом ионной имплантации
Author(s) -
S. B. Donaev
Publication year - 2020
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2020.16.49847.18293
Subject(s) - band gap , materials science , ion , conduction band , valence band , electron , annealing (glass) , atomic physics , optoelectronics , chemistry , physics , organic chemistry , quantum mechanics , composite material
The morphology, composition, and electronic properties of the CoSiO film obtained on the CoSi2/Si(111) surface by implantation of O2+ ions in combination with annealing were studied. The parameters of energy bands are determined and information on the density of state of electrons of the valence band and conduction band is obtained. In particular, it was shown that the band gap of this film is ~ 2.4 eV.