Open AccessЛазерная генерация перенесенных на кремний инжекционных микродисков с квантовыми точками InAs/InGaAs/GaAs
Author(s) -
A. E. Zhukov,
E. I. Moiseev,
А.М. Надточий,
А.C. Драгунова,
Н.В. Крыжановская,
M. M. Kulagina,
А. М. Можаров,
С.А. Кадинская,
O. I. Simchuk,
F. I. Zubov,
М. В. Максимов
Publication year - 2020
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2020.16.49844.18354
Subject(s) - optoelectronics , materials science , lasing threshold , substrate (aquarium) , wafer , indium arsenide , silicon , indium , laser , contact resistance , gallium arsenide , electrical contacts , wafer bonding , continuous wave , wavelength , current density , nanotechnology , optics , physics , oceanography , layer (electronics) , quantum mechanics , geology
AlGaAs/GaAs microdisk lasers with InAs/InGaAs quantum dots region were transferred onto a silicon wafer using indium bonding. Microlasers have a joint electrical contact put over a residual n+ GaAs substrate, whereas their individual addressing is achieved by placing them p-contact down to separate contact pads. No effect of non-native substrate on electrical resistance, threshold current, thermal resistance, and spectral characteristics was revealed. Microdisks lase in continuous-wave mode without external cooling with the threshold current density of 0.7 kA/cm2. Lasing wavelength remains stable (<0.1 nm/mA) against injection current increment.