Open AccessИсследование методом наноиндентирования твердости и модуля Юнга в тонких приповерхностных слоях карбида кремния со стороны Si- и C-граней
Author(s) -
А. В. Осипов,
А. С. Гращенко,
А.Н. Горляк,
Andrew O. Lebedev,
В. В. Лучинин,
А. В. Марков,
M. F. Panov,
С. А. Кукушкін
Publication year - 2020
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2020.15.49747.18346
Subject(s) - materials science , nanoindentation , modulus , penetration depth , silicon carbide , young's modulus , composite material , hexagonal crystal system , crystal (programming language) , surface energy , elastic modulus , silicon , crystallography , optics , metallurgy , programming language , chemistry , physics , computer science
This paper presents the results of a nanoindentation study of the hardness and Young’s modulus of hexagonal silicon carbide SiC-4H, obtained by the modified Lely method, in thin surface layers near the C-terminated and Si-terminated faces at small penetration depths of the indenter. It is shown that differences in the elastic properties and hardness of SiC propagate from the surface into the crystal to a depth of about 60 nm. The Young's modulus at the C-terminated face practically coincides with the Young's modulus of the bulk SiC-4H sample (~ 400 GPa), which is approximately 2.3 times higher than the Young's modulus at the Si-terminated face at a depth of 0 to 35 nm (~ 170 GPa). The value of the SiC hardness is approximately 1.5 times higher at the surface of the C-terminated face than at the Si-terminated face, on average, at a depth of 0 to 60 nm. It is concluded from the obtained data that the surface energy of the C-terminated face is also approximately 1.5 times higher than the surface energy of the Si-terminated face since a new surface is formed upon deformation or cracking of the crystal