Open AccessВлияние ростовой температуры на пассивирующие свойства пленок Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-, выращенных методом атомно-слоевого осаждения на поверхности CdHgTe
Author(s) -
Д. В. Горшков,
G.I. Sidorov,
I. V. Sabinina,
Ю.Г. Сидоров,
D. V. Marin,
М.В. Якушев
Publication year - 2020
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2020.15.49741.18347
Subject(s) - materials science , capacitance , dielectric , dissociation (chemistry) , analytical chemistry (journal) , atomic layer deposition , atmospheric temperature range , coating , passivation , optoelectronics , layer (electronics) , nanotechnology , chemistry , thermodynamics , electrode , physics , chromatography
The electrophysical interface properties of the passivating Al2O3 coating grown by the method of plasma-induced atomic layer deposition at various temperatures on MBE p-CdHgTe (x = 0.22) was experimentally studied by measuring the capacitance-voltage characteristics of MIS structures. It was found that, at a temperature of Al2O3 growth of 200 °С in MCT, the concentration of acceptors increases due to dissociation. At a temperature of 80 °С, the spread in the capacitance of the dielectric and the built-in charge increases. The optimum growth temperature of the passivating Al2O3coating on CdHgTe lies in the range of 120-160 °С.