Open AccessЭффект спиновой аккумуляции в эпитаксиальной структуре Fe-=SUB=-3-=/SUB=-Si/n-Si и влияние на него электрического смещения
Author(s) -
A. S. Tarasov,
А.В. Лукьяненко,
I. A. Bondarev,
И. А. Яковлев,
С. Н. Варнаков,
С. Г. Овчинников,
Н. В. Волков
Publication year - 2020
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2020.13.49591.18106
Subject(s) - silicon , ferromagnetism , epitaxy , materials science , condensed matter physics , spin (aerodynamics) , semiconductor , signal (programming language) , voltage , biasing , optoelectronics , nanotechnology , physics , computer science , thermodynamics , layer (electronics) , programming language , quantum mechanics
The electrical injection of a spin-polarized current into silicon was demonstrated in the Fe3Si/n-Si epitaxial structure. The spin accumulation effect was studied by measuring local and nonlocal voltage signals in a specially prepared 4-terminal device. The detected effect of electrical bias on the spin signal is discussed and compared with other results reported for ferromagnet/semiconductor structures.