Open AccessФемтосекундный лазерный отжиг многослойных тонкопленочных структур на основе аморфных германия и кремния
Author(s) -
А.В. Колчин,
Д.В. Шулейко,
А.В. Павликов,
С.В. Заботнов,
Л.А. Головань,
Д.Е. Преснов,
В.А. Володин,
Г.К. Кривякин,
А.А. Попов,
П.К. Кашкаров
Publication year - 2020
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2020.11.49499.18201
Subject(s) - materials science , femtosecond , germanium , silicon , crystallization , amorphous solid , raman spectroscopy , amorphous silicon , annealing (glass) , fluence , laser , optoelectronics , scanning electron microscope , substrate (aquarium) , nanocrystalline silicon , analytical chemistry (journal) , optics , crystallography , chemical engineering , crystalline silicon , composite material , chemistry , physics , oceanography , chromatography , geology , engineering
Femtosecond laser annealing of thin-film multilayered structures based on amorphous silicon and germanium were studied. The original samples were synthesized via plasma-enhanced deposition on glass substrate. Scanning electron microscopy revealed formation of periodic surface structures in the irradiated films. Raman spectra analysis revealed crystallization of amorphous germanium as a result of femtosecond laser pulses action, as well as fluence-dependent mixture of the germanium and silicon layers at absence of crystallization of the amorphous silicon layers.