Open AccessПовышение эффективности фильтрации прорастающих дислокаций в темплейтах AlN/c-Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- с фасетированной морфологией поверхности во время их роста методом молекулярно-пучковой эпитаксии
Author(s) -
А.В. Мясоедов,
Д. В. Нечаев,
В. В. Ратников,
A. E. Kalmykov,
L. M. Sorokin,
В. Н. Жмерик
Publication year - 2020
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2020.11.49495.18280
Subject(s) - transmission electron microscopy , molecular beam epitaxy , materials science , diffraction , template , electron diffraction , crystallography , morphology (biology) , epitaxy , optoelectronics , nanotechnology , optics , layer (electronics) , chemistry , physics , biology , genetics
The results of transmission electron microscopy study and X-ray diffraction analysis of AlN/c Al2O3 templates with GaN ultrathin insertions grown by plasma-assisted molecular beam epitaxy are presented. It is shown that AlN buffer layers with faceted surface morphology provide a much higher threading dislocations density reduction then with smooth layers. The filtering action of ultrathin GaN insertions is confirmed.