Open AccessСнижение плотности прорастающих дислокаций в темплейтах AlN/c-сапфир, выращенных методом плазменно-активированной молекулярно-пучковой эпитаксии
Author(s) -
В.В. Ратников,
Д.В. Нечаев,
А.В. Мясоедов,
О.А. Кошелев,
В.Н. Жмерик
Publication year - 2020
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2020.08.49307.18168
Subject(s) - sapphire , materials science , nucleation , template , molecular beam epitaxy , dislocation , diffraction , crystal (programming language) , crystal growth , crystallography , stress (linguistics) , optoelectronics , epitaxy , optics , nanotechnology , composite material , chemistry , layer (electronics) , laser , physics , organic chemistry , computer science , programming language , linguistics , philosophy
Multiple-crystal X-ray diffraction and a multi-beam optical stress sensor were used to study AlN/c-sapphire templates grown by plasma-assisted molecular beam epitaxy. The influence of the nucleation and buffer layers growth regimes, temperature, the ratio between Al and N* growth fluxes on the stress generation and the character of the dislocation structure were analyzed. Templates with the best crystal quality with screw and edge threading dislocation densities in a range of 4∙10^8 and 8∙10^9 cm-2, respectively, were obtained at the flux ratio of Al to N* close to 1 by using two-stage temperature regimes.