Исследование электрофизических свойств коллоидных квантовых точек антимонида индия

The mechanisms of current transport through indium antimonide quantum dots (QDs) have been examined by analyzing normalized differential tunneling current–voltage characteristics. Electron tunneling with the discrete spectrum of QDs taken into account has been studied. The positions of the first three levels of their electronic spectrum have been estimated. It has been demonstrated that the mechanism of the observed field emission from a film structure of colloidal indium antimonide QDs is characterized adequately by the Morgulis–Stratton theory in the range of electric-field intensities corresponding to the experimental conditions.