Open AccessВлияние температуры протонного облучения на характеристики мощных высоковольтных карбид-кремниевых диодов Шоттки
Author(s) -
В.В. Козловский,
Oleg Korolkov,
К.С. Давыдовская,
A.А. Лебедев,
М.Е. Левинштейн,
Н. Слепчук,
А.М. Стрельчук,
Jana Toompuu
Publication year - 2020
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2020.06.49163.18072
Subject(s) - irradiation , materials science , silicon carbide , optoelectronics , diode , schottky diode , radiation resistance , ohmic contact , capacitance , semiconductor , radiation , equivalent series resistance , voltage , electrical engineering , optics , chemistry , electrode , composite material , nuclear physics , physics , layer (electronics) , engineering
For the first time, the effect of irradiation at high temperature (“hot irradiation”) by protons on the capacitance – voltage and current – voltage characteristics of silicon carbide based semiconductor devices was studied. We investigated commercial high-voltage (blocking voltage of 1700 V) integrated 4H-SiC Schottky diodes. Irradiation was carried out by protons with an energy of 15 MeV at temperatures of 20-400 ° C. It has been established that the most sensitive to radiation parameter determining the radiation resistance of devices is the ohmic resistance of the base, which increases monotonically with increasing radiation dose D. It is shown that during “hot” irradiation, the radiation resistance of diodes significantly exceeds the resistance of diodes in low-temperature (“cold”) irradiation . It was concluded that, with increasing irradiation temperature, the rate of formation of deep centers in the upper half of the band gap of silicon carbide decreases.