Open AccessСтруктурное совершенство и состав легированных галлием термомиграционных слоев кремния
Author(s) -
А.А. Ломов,
Б.М. Середин,
С.Ю. Мартюшов,
А.Н. Заиченко,
С.Г. Симакин,
И.Л. Шульпина
Publication year - 2020
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2020.06.49161.18153
Subject(s) - materials science , fabrication , doping , substrate (aquarium) , secondary ion mass spectrometry , optoelectronics , aluminium , analytical chemistry (journal) , mass spectrometry , composite material , chemistry , medicine , oceanography , alternative medicine , pathology , chromatography , geology
We suggest a technique of fabrication of thick heavily Ga doped by thermomigration layers of Si for modern power electronics devices. Structure perfection and layers composition as a function of formation temperature were studied by techniques of X-ray Lang topography, X-ray rocking curves and secondary ion mass spectrometry. The fabricated layers are single crystalline, no mismatch dislocations were found on the interface with the Si substrate. The Ga concentration in the layers can be varied in the range (1.6-4.8)1019 cm-3, being higher than for Si doping with aluminum.