Open AccessТолстые эпитаксиальные слои alpha-Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- : Sn на профилированной сапфировой подложке
Author(s) -
В. И. Николаев,
A. I. Pechnikov,
L. I. Guzilova,
А.В. Чикиряка,
M. P. Shcheglov,
Vitaly Nikolaev,
С. И. Степанов,
А. А. Васильев,
И.В. Щемеров,
А.Я. Поляков
Publication year - 2020
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2020.05.49104.18107
Subject(s) - epitaxy , materials science , gallium , doping , yield (engineering) , optoelectronics , tin , tin oxide , analytical chemistry (journal) , dislocation , gallium oxide , crystallography , nanotechnology , metallurgy , chemistry , layer (electronics) , composite material , chromatography
Epitaxial layers of a new wide-band semiconductor (α-Ga_2O_3 doped with tin) have been grown by chloride epitaxy on smooth and patterned substrates, which are widely used to increase the emission yield in high-efficiency LED structures based on InGaN, and studied. The properties of the obtained gallium-oxide layers have been compared. Both types of samples had n -type conductivity, but the frequency and voltage dependences of their capacitance differed. Differences in the dislocation structure of epitaxial α-Ga_2O_3 layers on smooth and patterned substrates have been identified by X-ray diffractometry.