Open AccessМощностные характеристики нитрид-галлиевых СВЧ-транзисторов на подложках кремния
Author(s) -
И.А. Черных,
С.М. Романовский,
А.А. Андреев,
И.C. Езубченко,
М.Я. Черных,
Ю.В. Грищенко,
И.О. Майборода,
С.В. Корнеев,
М.М. Крымко,
М.Л. Занавескин,
В.Ф. Синкевич
Publication year - 2020
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2020.05.49100.18068
Subject(s) - chemical vapor deposition , materials science , heterojunction , optoelectronics , transistor , saturation (graph theory) , silicon nitride , voltage , silicon , analytical chemistry (journal) , electrical engineering , chemistry , environmental chemistry , engineering , mathematics , combinatorics
In this study, nitride heterostructures were grown on silicon substrates by metalorganic chemical vapour deposition. Transistors with a 1.32-mm periphery were fabricated based on them. The saturation power of transistors at a frequency of 1 GHz amounted to 4 W and 6.3 W at a supply voltage of 30 V and 60 V, respectively. The maximum drain efficiency was 57%.