Open AccessМаска на основе эпитаксиального слоя Si для самокаталитического роста нитевидных нанокристаллов на подложках GaAs (111)B и (100)
Author(s) -
Е.А. Емельянов,
А.Г. Настовьяк,
М. О. Петрушков,
Maxim Esin,
Т. А. Гаврилова,
М.А. Путято,
Н. Л. Шварц,
В. А. Швец,
A. V. Vasev,
Б.Р. Семягин,
В. В. Преображенский
Publication year - 2020
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2020.04.49042.18065
Subject(s) - molecular beam epitaxy , silicon , materials science , epitaxy , layer (electronics) , oxidizing agent , scanning electron microscope , ellipsometry , optoelectronics , analytical chemistry (journal) , nanotechnology , chemistry , thin film , composite material , organic chemistry , chromatography
GaAs nanowire (NW) self-catalyzed growth on GaAs (111) B and GaAs (100) substrates was carried out by molecular beam epitaxy. A mask for the self-catalyzed NW growth was created by oxidizing an epitaxial silicon layer grown on the GaAs surface by molecular beam epitaxy (MBE). Silicon oxidation was realized in an atmosphere of purified air under normal conditions without moving the structures out from the vacuum system volume of the molecular beam epitaxy chamber. The oxidation process of a silicon layer was studied using single-wave and spectral ellipsometry and the surface morphology of oxidized silicon was studied by atomic force microscopy. Substrates with NWs were studied by scanning electron microscopy. The NW density was demonstrated to be 2.6•107 cm-2 and 3•107 cm-2 for (111)B and (100), respectively.