Open AccessДальнодействующее магнитное взаимодействие в гетероструктурах InGaAs/GaAs/delta-< Mn>
Author(s) -
М. В. Дорохин,
П.Б. Дёмина,
Е. И. Малышева,
А. В. Кудрин,
M. V. Ved,
А. В. Здоровейщев
Publication year - 2020
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2020.02.48952.18069
Subject(s) - electroluminescence , heterojunction , delta , ion , polarization (electrochemistry) , circular polarization , materials science , gallium arsenide , active layer , condensed matter physics , optoelectronics , degree of polarization , chemistry , layer (electronics) , optics , physics , nanotechnology , scattering , thin film transistor , organic chemistry , astronomy , microstrip
The low-temperature circularly polarized electroluminescence in InGaAs/GaAs/delta heterostructures was investigated. It was found that the degree of circular polarization weakly depends on the spatial separation of the active region and the magnetic layer and is retained even at a spacer layer thickness of 12 nm. The revealed effect is associated with the long-range interaction of carriers with Mn ions.