Open AccessРоль пьезоэффекта в аномальной зависимости проводимости гетероструктуры AlGaAs/GaAs с двумерным электронным газом от расстояния между контактами
Author(s) -
В.Е. Сизов,
М.В. Степушкин
Publication year - 2020
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2020.02.48947.18007
Subject(s) - heterojunction , materials science , conductivity , semiconductor , condensed matter physics , piezoelectricity , orientation (vector space) , channel (broadcasting) , gallium arsenide , electrical resistivity and conductivity , electron , optoelectronics , chemistry , physics , electrical engineering , composite material , geometry , mathematics , engineering , quantum mechanics
The results of experimental studies of the conductivity of AlGaAs/GaAs heterostructure with two-dimensional electron gas at temperatures of 10-300 K are presented. At low temperatures, with a decrease in the distance between the contacts to the structure from 100 to 20 µm, a resistance increase was observed. To explain this anomalous dependence, a numerical simulation of the piezoelectric effect in a semiconductor on the channel conductivity is carried out. It is shown that it is necessary to take into account the crystallographic orientation of the channel and the effect on its potential of remote piezo-charges.