Open AccessВлияние кислородных вакансий на формирование и структуру филамента в мемристорах на основе диоксида кремния
Author(s) -
Е.В. Окулич,
В.И. Окулич,
D. I. Tetelbaum
Publication year - 2020
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2020.01.48859.18003
Subject(s) - nanoclusters , nucleation , silicon , materials science , amorphous solid , memristor , chemical physics , ion , amorphous silicon , layer (electronics) , nanotechnology , irradiation , optoelectronics , crystallography , chemistry , electronic engineering , crystalline silicon , physics , thermodynamics , engineering , organic chemistry , nuclear physics
The improvement of the parameters of the SiO2-based memristor is found when creating displacement cascades in the near-surface layer of a silicon dioxide film by irradiation with Xe+ ions. Molecular dynamic modeling of the structure of amorphous SiO2 enriched with oxygen vacancies has shown the possibility of nucleation of silicon nanoclusters, which can play a significant role in the formation and evolution of current conducting paths (filaments) and thereby affect the parameters of the memristor.