Open AccessГенерация терагерцевого излучения с поверхности монослойного WSe-=SUB=-2-=/SUB=-
Author(s) -
А.В. Горбатова,
Д.И. Хусяинов,
А.М. Буряков
Publication year - 2019
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2019.24.48803.18032
Subject(s) - terahertz radiation , electric field , materials science , monolayer , radiation , chemical vapor deposition , azimuth , silicon , far infrared laser , optics , optoelectronics , laser , amplitude , physics , nanotechnology , quantum mechanics
The parameters of the generated terahertz radiation in a two-dimensional WSe2 film grown by chemical vapor deposition were investigated for the first time. The main mechanism of the generated terahertz radiation in the studied sample was determined. The terahertz amplitude dependence on azimuthal angle in the two-dimensional WSe2 film was studied. The distribution of the laser pump electric field in the WSe2 / SiO2 / Si structure was calculated as a function of the silicon dioxide thickness. The choice of the optimal structural geometry for the effective generation of terahertz radiation by a monolayer WSe2 was theoretically justified