Open AccessОсобенности вольт-амперных характеристик полевых транзисторов с активными слоями на основе композитных пленок полупроводниковых полимеров с наночастицами неорганических перовскитов
Author(s) -
Е.В. Остроумова,
А.Н. Алешин
Publication year - 2019
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2019.23.48720.17929
Subject(s) - materials science , optoelectronics , transistor , current (fluid) , threshold voltage , composite number , voltage , semiconductor , electrode , field effect transistor , halide , electrical engineering , chemistry , composite material , inorganic chemistry , engineering
The current – voltage characteristics of composite field effect transistors with active layers based on inorganic perovskites - nanocrystals of cesium halides CsPbBr3 embedded in a PFO semiconductor polymer matrix (PFO: CsPbBr3) are analyzed. An increase of the current gain β in the current – voltage characteristics as a negative gate voltage increase was discovered and explained. It is shown that the appearance of additional injection of minority carriers from the electrodes into the induced channel,makes it possible to create the composite light-emitting field-effect transistors with improved characteristics.