Open AccessУпругое рассеяние нейтрального фтора на атомах Si, O, C и H в диапазоне относительных кинетических энергий 2-200 eV
Author(s) -
А.П. Палов,
J. Zhang,
Mikhaı̈l R. Baklanov,
Sh. Wei
Publication year - 2019
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2019.23.48713.17955
Subject(s) - scattering , ab initio , atomic physics , elastic scattering , nanoelectronics , ab initio quantum chemistry methods , kinetic energy , materials science , range (aeronautics) , sputtering , binary number , physics , thin film , nanotechnology , molecule , optics , composite material , arithmetic , mathematics , quantum mechanics
Binary interatomic potentials F-F, F-Si, F-O, F-C and F-H are calculated from the first principles (ab initio) on the basis of the multi-configuration method of self-consistent field (CAS-SCF) with a basic set of atomic wave functions aug-pp-AV6Z and are used to calculate phase shifts and cross sections of elastic scattering of atoms in the range of relative kinetic energies 2-200 eV. It is expected that the obtained elastic scattering cross sections will be useful for describing sputtering and etching of porous organosilicate films with ethylene bridges used in modern nanoelectronics.