Open AccessСинтез методом молекулярно-пучковой эпитаксии и свойства наноструктур InGaN разветвленной морфологии на кремниевой подложке
Author(s) -
R. R. Reznik,
К.П. Котляр,
Н.В. Крыжановская,
С.В. Морозов,
Г. Э. Цырлин
Publication year - 2019
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2019.21.48475.17975
Subject(s) - photoluminescence , materials science , optoelectronics , substrate (aquarium) , atmospheric temperature range , molecular beam epitaxy , nanotechnology , epitaxy , physics , layer (electronics) , oceanography , geology , meteorology
A possibility of InGaN «nanoflowers» MBE growth on Si substrate has been demonstrated. The results of morphological studies have shown that InGaN synthesis occurs in several stages even at constant substrate temperature. The grown structures show wide photoluminescence spectrum in the range from 450 to 950 nm at room temperature.