Open AccessГетеробарьерные варакторы с неоднородно легированными модулирующими слоями
Author(s) -
Н.А. Малеев,
М.А. Бобров,
А.Г. Кузьменков,
А.П. Васильев,
М.М. Кулагина,
Ю.А. Гусева,
С.А. Блохин,
В.М. Устинов
Publication year - 2019
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2019.20.48396.17960
Subject(s) - varicap , capacitance , materials science , optoelectronics , diode , heterojunction , molecular beam epitaxy , voltage , doping , leakage (economics) , epitaxy , electrical engineering , electrode , chemistry , nanotechnology , engineering , layer (electronics) , economics , macroeconomics
Optimal capacitance-voltage characteristic is critical for heterobarrier varactor diode (HBV) performance in terms of multiplication efficiency in mm- and sub-mm wave ranges. Numerical model of capacitance-voltage characteristics and leakage current for HBV with arbitrary heterostructure composition and doping profile was verified on published data and original experimental results. Designed HBV heterostructure with three undoped InAlAs/AlAs/InAlAs barriers surrounded with non-uniformly doped n-InGaAs modulation layers was grown by molecular-beam epitaxy on InP substrate and test HBV diodes have been fabricated. Test HBV diodes demonstrate capacitance-voltage characteristics with cosine shape at bias voltage up to two volts, increased capacitance ratio and low leakage current values.