Open AccessЛокализация электронов верхних долин в узкозонном канале --- возможный дополнительный механизм увеличения тока в DA-DpHEMT
Author(s) -
А.Б. Пашковский,
С.А. Богданов
Publication year - 2019
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2019.20.48385.17925
Subject(s) - heterojunction , doping , transistor , electron , acceptor , materials science , velocity overshoot , channel (broadcasting) , optoelectronics , overshoot (microwave communication) , condensed matter physics , physics , electrical engineering , voltage , engineering , quantum mechanics
The theoretical estimation of the effect of electron localization in the upper valleys in the narrow-band channel of transistor heterostructures AlxGa1–xAs-GaAs with two-sided doping on the value оf drift velocity overshoot is carried out. It is shown that for transistor heterostructures with donor-acceptor doping, in which the proportion of electrons transferred from the narrow-band channel to the wide-band material is less than in conventional structures, in some cases, the drift velocity increase can reach 15 % due to the localization of electrons in the upper valleys in the narrow-band channel. The studied effect can be an additional mechanism for increasing the current in transistors based on heterostructures with donor-acceptor doping.