Open AccessОсобенности вольт-амперной характеристики микродисковых лазеров на основе квантовых ям-точек InGaAs/GaAs
Author(s) -
F. I. Zubov,
E. I. Moiseev,
G. O. Kornyshov,
Н.В. Крыжановская,
Ю.М. Шерняков,
А.С. Паюсов,
M. M. Kulagina,
Н.А. Калюжный,
S. A. Mintairov,
М. В. Максимов,
A. E. Zhukov
Publication year - 2019
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2019.19.48316.17938
Subject(s) - optoelectronics , materials science , etching (microfabrication) , gallium arsenide , current (fluid) , quantum well , layer (electronics) , quantum dot , nanotechnology , laser , optics , electrical engineering , physics , engineering
Microlasers formed by deep etching with an active region based on arrays of InGaAs/GaAs quantum well-dots were studied. The way how the current-voltage characteristic changes with decreasing microlaser diameter indicates the formation of a nonconducting layer about 1.5 μm thick near the side walls, which leads to a decrease in the effective area of current flow