Open AccessГлубокая 3D-рентгенолитография на основе высококонтрастного рентгенорезиста
Author(s) -
В.П. Назьмов
Publication year - 2019
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2019.18.48227.17879
Subject(s) - resist , lithography , x ray lithography , perpendicular , optics , materials science , electron beam lithography , microstructure , transverse plane , layer (electronics) , beam (structure) , optoelectronics , nanotechnology , physics , engineering , geometry , composite material , mathematics , structural engineering
In the classical X-ray lithography, the X-ray beam is perpendicular to both the mask and the resist layer; the beam starts to create microstructure along its path without transverse modulation. With the advanced technique of tilting and rotating the mask/resist layer and due account of properties of X-ray resist, multiple exposure enables creation of real 3D shape with submicrometer accuracy. This paper presents a technique of creation of real 3D microstructures with application of multi-beam X-ray lithography. This technique enables creation of a large number of 3D structures.