Влияние центра EL2 на фотоотклик ансамбля радиальных нитевидных нанокристаллов GaAs/AlGaAs | Zendy

N. R. Grigor’eva | Zendy; I. V. Shtrom | Zendy; R. V. Grigor’ev | Zendy; I. P. Soshnikov | Zendy; R. R. Reznik | Zendy; Ю.Б. Самсоненко | Zendy; N. V. Sibirev | Zendy; Г. Э. Цырлин | Zendy

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Влияние центра EL2 на фотоотклик ансамбля радиальных нитевидных нанокристаллов GaAs/AlGaAs

Author(s) -

N. R. Grigor’eva,

I. V. Shtrom,

R. V. Grigor’ev,

I. P. Soshnikov,

R. R. Reznik,

Ю.Б. Самсоненко,

N. V. Sibirev,

Г. Э. Цырлин

Publication year - 2019

Publication title -

письма в журнал технической физики

Language(s) - English

Resource type - Journals

eISSN - 1726-7471

pISSN - 0320-0116

DOI - 10.21883/pjtf.2019.16.48155.17870

Subject(s) - molecular beam epitaxy , nanowire , substrate (aquarium) , materials science , optoelectronics , silicon , epitaxy , crystal (programming language) , gallium arsenide , nanotechnology , layer (electronics) , oceanography , geology , computer science , programming language

The role of EL2 defect in a formation of a photoresponse of an array of radial GaAs/AlGaAs nanowires (x=0.3) n-type grown by molecular beam epitaxy on a p-type silicon substrate was studied. A significant reduction in the recovery time of the photoresponse of nanowires was found in comparison with the bulk crystal during the transition of the EL2-center from the non-photoactive to the normal state.

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