Open AccessВлияние центра EL2 на фотоотклик ансамбля радиальных нитевидных нанокристаллов GaAs/AlGaAs
Author(s) -
N. R. Grigor’eva,
I. V. Shtrom,
R. V. Grigor’ev,
I. P. Soshnikov,
R. R. Reznik,
Ю.Б. Самсоненко,
N. V. Sibirev,
Г. Э. Цырлин
Publication year - 2019
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2019.16.48155.17870
Subject(s) - molecular beam epitaxy , nanowire , substrate (aquarium) , materials science , optoelectronics , silicon , epitaxy , crystal (programming language) , gallium arsenide , nanotechnology , layer (electronics) , oceanography , geology , computer science , programming language
The role of EL2 defect in a formation of a photoresponse of an array of radial GaAs/AlGaAs nanowires (x=0.3) n-type grown by molecular beam epitaxy on a p-type silicon substrate was studied. A significant reduction in the recovery time of the photoresponse of nanowires was found in comparison with the bulk crystal during the transition of the EL2-center from the non-photoactive to the normal state.