Open AccessГетероструктуры Ga-=SUB=-x-=/SUB=-In-=SUB=-1-x-=/SUB=-As-=SUB=-y-=/SUB=-Bi-=SUB=-z-=/SUB=-Sb-=SUB=-1-y-z-=/SUB=-/InSb для фотоприемных устройств (λ = 6-12 μm)
Author(s) -
Л. С. Лунин,
М. Л. Лунина,
А. С. Пащенко,
Д. Л. Алфимова,
О. С. Пащенко
Publication year - 2019
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2019.16.48152.17863
Subject(s) - lambda , bismuth , wavelength , heterojunction , materials science , band gap , photosensitivity , photodetector , physics , optoelectronics , analytical chemistry (journal) , optics , condensed matter physics , chemistry , metallurgy , chromatography
GaxIn1-xAsyBizSb1-y-z/InSb isoparametric heterostructures for photodetectors operating in the wavelength band of 6-12 μm are obtained by the method of zone recrystallization in temperature gradient. Bismuth introduction into the GaInAsSb solid solution makes decrising the band gap Eg possible and expanding the spectral range to 12 μm and shifting the photosensitivity maximum to the long wavelength region, accordingly.