Open AccessХарактеристики кремниевого лавинного фотодиода для ближнего ИК-диапазона
Author(s) -
П.Н. Аруев,
Б.Я. Бер,
А.Н. Горохов,
В.В. Забродский,
Д.Ю. Казанцев,
А.В. Николаев,
В.В. Филимонов,
М.З. Шварц,
Е.В. Шерстнёв
Publication year - 2019
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2019.15.48086.17851
Subject(s) - dark current , spectral sensitivity , avalanche photodiode , photosensitivity , materials science , optoelectronics , photodiode , dynamic range , sensitivity (control systems) , optics , current (fluid) , physics , photodetector , detector , wavelength , electronic engineering , thermodynamics , engineering
Sensitivity in 400 – 1150 nm spectral range, dark current and dynamic characteristics have beentested of a developed silicon avalanche photodiode with an active diameter of 1.5 mm.Developed Si APD possesses: photosensitivity 80-85 A/W in 900 - 1010 nm spectral range, 1.5nA dark current, rise and fall time less than 2.5 ns with a bias voltage of 350 v.