Рост полупроводниковых III-V гетероструктур на подложках SiC/Si

A heterostructure consisting of three thick layers: AlN (thickness 0.72 μm), AlGaN (thickness 1.82 μm) and GaN (thickness 2.2 μm) was grown by the method of chloride hydride epitaxy on Si with a buffer layer of nano-SiC. The nano-SiC layer was obtained by the method of atomic substitution. The grown heterostructure was studied by scanning electron microscopy, back-reflected electron diffraction, energy dispersive analysis, and Raman scattering. Studies have shown that the use of nano-SiC/Si substrates makes it possible to grow III-V layers with a high growth rate (~ 66 μm/h) without cracks and with small residual elastic stresses (~ 160 MPa).