Open AccessРост полупроводниковых III-V гетероструктур на подложках SiC/Si
Author(s) -
Sh. Sh. Sharofidinov,
С.А. Кукушкин,
Alexey Redkov,
А. С. Гращенко,
А. В. Осипов
Publication year - 2019
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2019.14.48018.17841
Subject(s) - materials science , heterojunction , scanning electron microscope , epitaxy , layer (electronics) , raman scattering , diffraction , raman spectroscopy , hydride , electron diffraction , optoelectronics , crystallography , analytical chemistry (journal) , composite material , optics , metallurgy , chemistry , metal , physics , chromatography
A heterostructure consisting of three thick layers: AlN (thickness 0.72 μm), AlGaN (thickness 1.82 μm) and GaN (thickness 2.2 μm) was grown by the method of chloride hydride epitaxy on Si with a buffer layer of nano-SiC. The nano-SiC layer was obtained by the method of atomic substitution. The grown heterostructure was studied by scanning electron microscopy, back-reflected electron diffraction, energy dispersive analysis, and Raman scattering. Studies have shown that the use of nano-SiC/Si substrates makes it possible to grow III-V layers with a high growth rate (~ 66 μm/h) without cracks and with small residual elastic stresses (~ 160 MPa).