Open AccessВлияние облучения ионами Si-=SUP=-+-=/SUP=- на резистивное переключение мемристивных структур на основе стабилизированного диоксида циркония
Author(s) -
Evgeniya Okulich,
М.Н. Коряжкина,
Dmitriy S. Korolev,
А. И. Белов,
М. Е. Шенина,
А. Н. Михайлов,
D. I. Tetelbaum,
И. Н. Антонов,
Ю.А. Дудин
Publication year - 2019
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2019.14.48012.17807
Subject(s) - irradiation , materials science , resistive touchscreen , ion , optoelectronics , resistive random access memory , yttria stabilized zirconia , cubic zirconia , composite material , chemistry , electrode , ceramic , electrical engineering , physics , nuclear physics , organic chemistry , engineering
Resistive switching of memristive structures based on films of yttria stabilized zirconia (40 nm), irradiated with Si+ ions with an energy of 6 keV and a dose of 5.4∙1015 cm-2, was studied. It is established that ion irradiation leads to an increase in the stability of the parameters of resistive switching. This improvement is due to the fact that the diameter of the filaments as a result of irradiation is limited to the lateral size of the region of the individual cascades of displacement. Oxidation of such filaments in the process of resistive switching occurs more efficiently, which leads to an increase in resistance in a high resistance state.