Open AccessПланарные емкостные структуры на основе сегнетоэлектрических пленок титаната-станната бария на сапфире для сверхвысокочастотных применений
Author(s) -
А.В. Тумаркин,
М.В. Злыгостов,
А.Г. Гагарин,
А.Г. Алтынников,
Е.Н. Сапего
Publication year - 2019
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2019.13.47947.17776
Subject(s) - materials science , ferroelectricity , capacitor , dielectric , barium titanate , sapphire , planar , barium , stannate , optoelectronics , optics , electrical engineering , voltage , metallurgy , computer science , laser , physics , computer graphics (images) , zinc , engineering
The structural properties of ferroelectric films of barium titanate-stannate on the sapphire substrates and the microwave characteristics of planar capacitors on their base are investigated. It was found that the composition of the gas ambient during the deposition of the film has a significant effect on the crystal structure, the phase composition of the films and their electrical characteristics. A low level of dielectric loss of planar capacitors with high tunability based on films of barium titanate stannate in the frequency range of 2-60 GHz was demonstrated.