Open AccessФоточувствительность оптических сенсоров на основе дихалькогенидов переходных металлов: влияние толщины на их спектральные характеристики
Author(s) -
А.Ю. Авдижиян,
S. D. Lavrov,
А.В. Кудрявцев,
A. P. Shestakova,
М. В. Васина
Publication year - 2019
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2019.12.47918.17773
Subject(s) - photocurrent , materials science , interference (communication) , allowance (engineering) , semiconductor , optoelectronics , wavelength , spectroscopy , radiation , layer (electronics) , absorption (acoustics) , optics , nanotechnology , telecommunications , physics , mechanical engineering , channel (broadcasting) , quantum mechanics , computer science , engineering , composite material
In this work, samples of field-effect transistors were fabricated based on solid solutions of transition metal dichalcogenides and their spectral characteristics were studied using photocurrent spectroscopy. The results of a theoretical estimate of the total optical absorption of two-dimensional semiconductors at different thicknesses of the sample and for different wavelengths of optical radiation with allowance for multibeam interference are presented. It is shown that interference effects make a significant contribution to the change in the shape of the spectral characteristics of optical sensors with a change in the thickness of the photosensitive layer of transition metal dichalcogenides.