Open AccessДиэлектрическая спектроскопия пленок VO-=SUB=-2-=/SUB=-:Ge
Author(s) -
A. V. Il’inskiĭ,
Р. А. Кастро,
A. Koov,
M. E. Pashkevich,
И.О. Попова,
E. B. Shadrin
Publication year - 2019
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2019.11.47825.17767
Subject(s) - dielectric , materials science , dissipation factor , dielectric spectroscopy , permittivity , diagram , frequency dependence , electrical impedance , dielectric response , tangent , dielectric loss , range (aeronautics) , condensed matter physics , analytical chemistry (journal) , physics , optoelectronics , mathematics , nuclear magnetic resonance , chemistry , electrode , composite material , geometry , statistics , quantum mechanics , chromatography , electrochemistry
The frequency dependencies of complex impedance $$\dot {Z}$$ , dielectric permittivity ε, and dielectric loss tangent tanδ of thin (1400 Å ) films V_1 –_ x Ge_ x O_2 (for x = 0 and 0.03) are studied in the frequency range of 10‒10^6 Hz at 300 K. It is found that, at x = 0, the frequency dependence of tanδ has a maximum at a frequency of 100 kHz, whereas at x = 0.03 an additional maximum in the region of 10 kHz is detected. Also, the Cole–Cole diagram of VO_2:Ge films acquires a feature in the form of an additional semicircle. Owing to the extremely high sensitivity of the dielectric spectroscopy method, the proposed equivalent circuit diagram of the sample allowed detecting the existence of two sets of VO_2 nanocrystallites in the V_0.97Ge_0.03O_2 film, including Ge-doped nanocrystallites and practically nondoped ones.