Open AccessИсследование влияния структурных дефектов на спектры фотолюминесценции в n-3C-SiC
Author(s) -
А.А. Лебедев,
И.П. Никитина,
N. V. Seredova,
Н. К. Полетаев,
S. P. Lebedev,
В. В. Козловский,
A. V. Zubov
Publication year - 2019
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2019.11.47820.17755
Subject(s) - epitaxy , materials science , crystallography , single crystal , doping , acceptor , heterojunction , crystal (programming language) , getter , irradiation , optoelectronics , condensed matter physics , nanotechnology , layer (electronics) , chemistry , physics , computer science , nuclear physics , programming language
Photoluminescence (PL) spectra have been studied in 3 C -SiC/4 H -SiC heterostructures and 3 C ‑SiC single crystals. It was shown that epitaxial 3 C -SiC layers grown on 4 H -SiC substrates have a markedly poorer crystal perfection than do 3 C -SiC single crystals. It was found that doping with aluminum gives rise to a characteristic PL both in epitaxial layers and in 3 C -SiC single crystals. At the same time, the electron irradiation of epitaxial layers does not give rise to defect-related PL, in contrast to what is observed for single crystals. An assumption is made that the twin boundaries existing in epitaxial 3 C -SiC layers can serve as getters of radiation defects that are components of donor–acceptor pairs responsible for the “defect-related” PL.