Open AccessВнутризонное поглощение излучения свободными дырками в квантовых ямах GaAs/InGaAs с учетом несферичности kP-гамильтониана
Author(s) -
Nikolay Pavlov,
Г.Г. Зегря
Publication year - 2019
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2019.10.47748.17478
Subject(s) - heterojunction , quantum well , attenuation coefficient , hamiltonian (control theory) , polarization (electrochemistry) , condensed matter physics , charge carrier , radiation , gallium arsenide , absorption (acoustics) , spectral line , physics , materials science , chemistry , optics , quantum mechanics , mathematics , mathematical optimization , laser
The system of Kane equations is derived and solved with taking into account the elastic stresses and the nonsphericity of the kP Hamiltonian. Analytical expressions for the energy spectra of charge carriers are obtained. The radiation absorption coefficient by heavy holes with transition to the spin-split zone in GaAs/InGaAs quantum wells was calculated for different directions of polarization of the incident radiation. It was shown that for the GaAs/InGaAs heterostructure, the maximum absorption will be observed when the QW width is 4–6 nm.