Open AccessАвтоэмиссия многоострийных катодных матриц на кремнии p-типа в сильных импульсных электрических полях
Author(s) -
Р.К. Яфаров
Publication year - 2019
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2019.09.47702.17721
Subject(s) - microsecond , materials science , silicon , dipole , pulse duration , electron , etching (microfabrication) , cathode , plasma , atomic physics , optoelectronics , analytical chemistry (journal) , chemistry , optics , nanotechnology , laser , physics , organic chemistry , layer (electronics) , quantum mechanics , chromatography
In this paper, we experimentally studied the dynamic properties of autoelectron emission in strong pulsed electric fields of microsecond duration for multipointed cathode arrays based on surface-modified silicon crystals of the hole type. A decrease in the thresholds for the autoemission onset with an increase in the pulse duration is shown to increase the transparency of potential barriers due to an increase in the electron energy. Autoemission parameters are determined by surface dipole moments and embedded surface potentials that are formed during plasma etching of silicon in various chemically active media.