Open AccessВлияние образования силицидов на удельное сопротивление кремния
Author(s) -
Б.Е. Умирзаков,
Д.А. Ташмухамедова,
Г.Х. Аллаярова,
Ж.Ш. Содикжанов
Publication year - 2019
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2019.07.47539.17650
Subject(s) - boron , materials science , silicide , silicon , impurity , nickel , thin film , crystallography , analytical chemistry (journal) , metallurgy , nanotechnology , chemistry , organic chemistry , chromatography
The effect of the formation of thin films of nickel silicides on the migration of intrinsic p -type impurities in silicon was studied for the first time. It was found that bulk resistance $${{\rho }_{{v}}}$$ of a single Si crystal increases by a factor of 3–4 if a NiSi_2 film with thickness θ ≥ 50–100 Å forms on its surface. This is attributable to the migration of boron atoms toward the silicide film. The Si layer thickness enabling measurable boron migration was estimated at 800–1000 Å.