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Омические контакты к оксиду европия для устройств спинтроники
Author(s) -
А.А. Андреев,
Ю.В. Грищенко,
И.А. Черных,
М.Л. Занавескин,
Э.Ф. Лобанович
Publication year - 2019
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2019.07.47536.17649
Subject(s) - ohmic contact , materials science , fabrication , molecular beam epitaxy , optoelectronics , contact resistance , epitaxy , nanotechnology , medicine , layer (electronics) , alternative medicine , pathology
A technique for in situ fabrication of aluminum-based Ohmic contacts to EuO by molecular-beam epitaxy is proposed. These contacts have a linear current–voltage curve and a contact resistance of 0.55 Ω mm and are stable in air. This suggests that the proposed technique holds promise for spintronic applications.

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