Open AccessДетекторы на основе низкобарьерных диодов Мотта и их характеристики в диапазоне 150-250 GHz
Author(s) -
P. Volkov,
Н.В. Востоков,
А.В. Горюнов,
L. M. Kukin,
В.В. Паршин,
Е.А. Серов,
В. Ю. Шашкин
Publication year - 2019
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2019.05.47401.17613
Subject(s) - millimeter , diode , detector , planar , optoelectronics , materials science , sensitivity (control systems) , wavelength , doping , optics , physics , electronic engineering , engineering , computer science , computer graphics (images)
The characteristics of millimeter-wavelength detectors based on planar Mott diodes with near-surface δ-doping operating without a constant bias are discussed. These detectors have a volt–watt sensitivity of ~1000 V/W with NEP ~ 10 pW/Hz^1/2 in the 150–250 GHz range. The obtained estimates reveal the possibility of an additional order-of-magnitude enhancement of the performance characteristics of detectors with smaller areas of the diode barrier contact.