Open AccessИсследование влияния радиации на рекомбинационные потери в гетеропереходных солнечных элементах на основе монокристаллического кремния
Author(s) -
И.Е. Панайотти,
Е.И. Теруков
Publication year - 2019
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2019.05.47388.17612
Subject(s) - diffusion , materials science , semiconductor , carrier lifetime , heterojunction , recombination , optoelectronics , solar cell , silicon , degradation (telecommunications) , semiconductor device , computational physics , electronic engineering , physics , chemistry , thermodynamics , nanotechnology , engineering , biochemistry , layer (electronics) , gene
A method has been developed for numerically estimating the recombination loss in silicon heterojunction solar cells under irradiation. The calculations are based on an analysis of the experimental short-circuit currents. The suggested model makes it possible to evaluate the degree of degradation of semiconductor structures by calculating the decrease in the bulk lifetime and in the diffusion length of carriers. The results obtained are of practical importance for examining the possibility of using this type of solar cells in space conditions.