Open AccessВлияние морфологии поверхности слоев InAlAs на температурные зависимости параметров диодов Шоттки Au/Ti/n-InAlAs (001)
Author(s) -
I. B. Chistokhin,
M. S. Aksenov,
N. A. Valisheva,
Д. В. Дмитриев,
I. V. Marchishin,
A. I. Toropov,
К.С. Журавлев
Publication year - 2019
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2019.04.47342.17609
Subject(s) - materials science , molecular beam epitaxy , schottky barrier , schottky diode , optoelectronics , epitaxy , nanotechnology , layer (electronics) , diode
Growth-related structural defects present on the surface of InAlAs layers grown by molecular beam epitaxy on InP(001) substrates influence the temperature dependences of the current–voltage characteristics of Au/Ti/InAlAs Schottky barriers. It is established that these defects in the form of pits cause the appearance of regions with reduced barrier height. At a surface density of ≥10^7 cm^–2, these defects significantly influence the parameters of the Schottky barriers at temperatures below 200 K.