Open AccessИзучение характеристик транзисторов на гетероструктурах нитрида галлия, выращенных методом аммиачной молекулярно-лучевой эпитаксии на подложках сапфира и кремния
Author(s) -
А.А. Андреев,
Ю.В. Грищенко,
И.C. Езубченко,
М.Я. Черных,
Е.М. Колобкова,
И.О. Майборода,
И.А. Черных,
М.Л. Занавескин
Publication year - 2019
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2019.04.47340.17567
Subject(s) - transconductance , materials science , optoelectronics , transistor , substrate (aquarium) , molecular beam epitaxy , sapphire , epitaxy , silicon , gallium nitride , silicon on sapphire , heterojunction , voltage , silicon on insulator , nanotechnology , electrical engineering , layer (electronics) , optics , laser , oceanography , physics , geology , engineering
Ammonia molecular-beam epitaxy has been used to grow gallium nitride (GaN) transistor heterostructures on sapphire and silicon substrates. GaN transistors with a 1.2-mm periphery fabricated on substrates of both types exhibited similar high static characteristics: saturation current density above 0.75 A/mm, transconductance above 300 mS/mm, and breakdown voltage above 120 V. Measurements of the small-signal parameters showed that transistors based on silicon substrates possessed high gain in a frequency range up to 5 GHz; the specific output power at 1 GHz amounted to 5 W/mm for transistors on sapphire substrate and 2 W/mm for transistors on silicon substrate.