Open AccessГетероструктура BaTiO-=SUB=-3-=/SUB=-/LaSrMnO-=SUB=-3-=/SUB=- на сапфире для сегнетоэлектрических туннельных переходов
Author(s) -
А.Г. Гагарин,
А.В. Тумаркин,
Е.Н. Сапего,
Т.С. Кункель,
В.М. Стожаров
Publication year - 2019
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2019.04.47334.17599
Subject(s) - materials science , ferroelectricity , hysteresis , sapphire , sputter deposition , layer (electronics) , voltage , piezoelectricity , substrate (aquarium) , optoelectronics , phase (matter) , sputtering , dielectric , thin film , composite material , optics , condensed matter physics , electrical engineering , nanotechnology , geology , chemistry , laser , oceanography , physics , engineering , organic chemistry
BaTiO_3/LaSrMnO_3 (BTO/LSMO) structures with a ferroelectric layer thickness of 10 nm have been formed on r -cut sapphire substrate by means of high-frequency magnetron sputtering. Investigations of the sample structure showed the presence of a crystalline phase, while measurements of electrical properties revealed piezoelectric response of the BTO films. The study of local current–voltage characteristics showed dependence of the sample resistance on the prehistory of voltage application as determined by ferroelectric hysteresis of the BTO layer.