Open AccessДефекты с глубокими уровнями в фотоэлектрическом преобразователе с антиотражающей пленкой пористого кремния, сформированной окрашивающим химическим травлением
Author(s) -
В.В. Трегулов,
В.Г. Литвинов,
А.В. Ермачихин
Publication year - 2019
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2019.04.47332.17597
Subject(s) - porous silicon , materials science , silicon , semiconductor , optoelectronics , etching (microfabrication) , photovoltaic system , isotropic etching , porosity , deep level transient spectroscopy , composite material , electrical engineering , engineering , layer (electronics)
Defects in the semiconductor structure of a photovoltaic converter (PVC) with a p – n junction and antireflection film of porous silicon manufactured using chemical stain etching were studied by the current deep-level transient spectroscopy technique. The influence of the regime of porous silicon film formation on the transformation of deep-level defects and the main PVC characteristics is explained.