
Синтез легированного кислородом графитоподобного нитрида углерода из тиомочевины
Author(s) -
Н.М. Денисов,
Е.Б. Чубенко,
В.П. Бондаренко,
В.Е. Борисенко
Publication year - 2019
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2019.03.47274.17503
Subject(s) - oxygen , rhodamine b , aqueous solution , irradiation , photocatalysis , materials science , doping , annealing (glass) , thiourea , nuclear chemistry , band gap , graphite , semiconductor , chemistry , photochemistry , analytical chemistry (journal) , organic chemistry , metallurgy , optoelectronics , physics , nuclear physics , catalysis
We have synthesized oxygen-doped graphite-like carbon nitride (g-C_3N_4) by the thermal treatment of the thiourea at 450–550°C. With an increase in the annealing temperature, the oxygen concentration in g-C_3N_4 increases, and the band-gap of the material decreases from 2.64 to 2.47 eV. The semiconductor properties of g-C_3N_4 doped with oxygen are confirmed by its high photocatalytic activity, determined by decoloration of a Rhodamine B aqueous solution in the presence of g-C_3N_4 upon irradiation with visible light.