Open AccessВлияние слоя аморфного кремния на адсорбционные свойства полупроводниковой структуры в условиях фотостимуляции
Author(s) -
С.В. Стецюра,
А.В. Козловский,
Д.М. Митин,
А.А. Сердобинцев
Publication year - 2019
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2019.02.47215.17520
Subject(s) - glucose oxidase , adsorption , wafer , photostimulation , layer (electronics) , silicon , materials science , amorphous solid , amorphous silicon , chemical engineering , nanotechnology , chemistry , analytical chemistry (journal) , optoelectronics , crystalline silicon , biosensor , crystallography , chromatography , organic chemistry , biochemistry , engineering
The photostimulated adsorption of glucose oxidase (GOx) on the surface of single-crystalline Si wafers with an amorphous silicon (a-Si) layer was examined. Estimation of the difference between the surface coverage by GOx molecules deposited under illumination and in the dark showed that this value increased for the structures with a-Si layer by a factor of 2.5 in the case of n -Si and by a factor of 1.5 in the case of p -Si. It is revealed that the n -Si/a-Si structures can be used for preliminary photostimulation of the GOx adsorption process.