Open AccessЭлектронно-эмиссионные свойства полупроводниковых субмикронных частиц
Author(s) -
М.В. Гавриков,
Н.Д. Жуков,
Д.С. Мосияш,
А.А. Хазанов
Publication year - 2019
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2019.01.47157.17532
Subject(s) - triode , materials science , semiconductor , field electron emission , secondary emission , scanning electron microscope , photoexcitation , optoelectronics , nanotechnology , electron , excited state , composite material , atomic physics , physics , capacitor , quantum mechanics , voltage
The electron emission properties of submicron Si, GaAs, InSb, and InAs semiconductor particles and their multigrain structures have been investigated. The effect of the properties of nanoparticles on the field and secondary emissions has been established. A scanning electron microscopy-based method for measuring the secondary emission coefficient of semiconductors has been proposed. The effect of photoexcitation of the multigrain structure of submicron semiconductor particles on their secondary emission properties has been investigated by the vacuum triode method.