Open AccessВозникновение множественных сбоев под действием протонов в статических ОЗУ с технологической нормой 90 nm
Author(s) -
Н.А. Иванов,
О.В. Лобанов,
В.В. Пашук,
М.О. Прыгунов,
К.Г. Сизова
Publication year - 2019
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2019.01.47150.17534
Subject(s) - static random access memory , electronic circuit , integrated circuit , event (particle physics) , single event upset , irradiation , materials science , computer science , electronic engineering , optoelectronics , physics , nuclear physics , engineering , electrical engineering , quantum mechanics
The occurrence of single-event upsets (SEUs) in 90-nm SRAM integrated circuits irradiated by 1000-MeV protons has been investigated. The experimental data were analyzed and processed, and the results showed the possibility of multiple cell upsets in the integrated circuits studied.