Open AccessИсследование омических контактов мощных фотоэлектрических преобразователей
Author(s) -
А.В. Малевская,
В.П. Хвостиков,
Ф.Ю. Солдатенков,
О.А. Хвостикова,
А.С. Власов,
В.М. Андреев
Publication year - 2019
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2019.01.47148.17544r
Subject(s) - ohmic contact , fabrication , materials science , electrical resistivity and conductivity , deposition (geology) , doping , optoelectronics , current density , layer (electronics) , nanotechnology , electrical engineering , medicine , paleontology , alternative medicine , physics , engineering , pathology , quantum mechanics , sediment , biology
Ohmic contacts of power AlGaAs/GaAs-based photovoltaic converters were studied, and a technique for their fabrication was developed. Effect of the doping level of the contact layer on the free-carrier density and the contact resistivity was examined. A technique for fabrication of 2- to 4-μm-thick ohmic contacts with electrochemical deposition of gold layers was studied. The effect of deposition modes on the surface morphology of ohmic contacts and their solidity and conductivity was revealed.