Open AccessОсобенности переключения мемристорных структур в высокоомное состояние пилообразными импульсами
Author(s) -
Д.О. Филатов,
В.В. Карзанов,
И.Н. Антонов,
О.Н. Горшков
Publication year - 2018
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.24.47035.17531
Subject(s) - memristor , tin , materials science , current (fluid) , biasing , voltage , condensed matter physics , physics , electrical engineering , thermodynamics , metallurgy , engineering
It has been experimentally established that the time of switching by triangular pulses in Ti—TiN–ZrO_2(Y)–Zr–Au memristor structures from the state of low resistance to the state of high resistance is inversely proportional to the voltage rise rate, i.e., the bias current through the memristor structure. A mechanism for the influence of a bias current on the switching time of the structure has been proposed.